The role of a conductive CaRuO3 bottom electrode for ferroelectric BaTiO3 films on a Si substrate

被引：2
作者：
Paik, Hanjong [2 ]
Hong, Jongin [3 ]
Jang, Yong-oon [2 ]
Park, Yun Chang [4 ]
Lee, Jeong Yong [2 ]
Song, Hanwook [1 ]
No, Kwangsoo [2 ]
机构：
[1] Korea Res Inst Stand & Sci, Grp Stand & Basis Metrol, Taejon 305340, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England
[4] Natl Nano Fab Ctr 335, Measurements & Anal Div, Taejon 305806, South Korea
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 07期
关键词：
CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; EPITAXIAL-GROWTH; BARIUM-TITANATE; TEMPERATURE;
D O I：
10.1002/pssa.200824296
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A capacitor of Pt/BaTiO3/CaRuO3 (Pt/BTO/CRO) was successfully prepared on a Si substrate by using radio-frequency (RF) magnetron sputtering. The preferentially (110)-oriented CRO bottom electrode enabled us to obtain highly oriented BTO thin film on the Si substrate. Local epitaxy between BTO and CRO was clearly confirmed by high resolution transmission electron microscopy (HRTEM) and fast Fourier transformation (FFT) analysis. The clear interface between CRO and BTO without any Si diffusion and silicate formation was determined by Auger electron spectroscopy (AES). The polarization value (2P(r)) of 6 mu C/cm(2), the coercive field (2 vertical bar E-c vertical bar) of 61 kV/cm and the stable current density of 1 x 10(-8) A/cm(2) around 2100 kV/cm electric field were obtained. Its tunability on CRO was reached up to 0.52 with a loss tangent less than 0.09 at room temperature. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：1478 / 1483
页数：6
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