Formation of silicon islands free buried oxide layer by energy optimization at very low dose ion implantation

被引：1

作者：

Wang, X ^{[1
]}

Chen, M ^{[1
]}

Dong, YM ^{[1
]}

Chen, J ^{[1
]}

Wang, X ^{[1
]}

Liu, XH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China

来源：

SURFACE & COATINGS TECHNOLOGY | 2002年 / 158卷

基金：

中国国家自然科学基金;

关键词：

transmission electron microscopy; ion implantation; oxygen; silicon; multiplayer;

D O I：

10.1016/S0257-8972(02)00200-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low-energy, low-dose separation-by-implantation-of-oxygen silicon-on-insulator materials have been successfully fabricated with doses of 2.5 X 10(17) and 3.5 X 10(17) O+ cm(-2) at energies of 130, 100, 70 keV, followed by a high temperature annealing. The microstructure evolution was investigated by cross-sectional transmission electron microscopy. The results show that a good dose-energy match is important for the formation of superior low-dose low-energy SIMOX materials with high integrity buried oxide layer. The effect of oxygen concentration on the improvement of the buried oxide layer quality during high temperature annealing is also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：180 / 185

页数：6

共 11 条

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