Influence of the Carbon Content on the Crystallization and Oxidation Behavior of Polymer-Derived Silicon Carbide (SiC)

被引：13

作者：

Lehmann, Tobias ^{[1
]}

Baier, Johannes ^{[1
]}

Leineweber, Andreas ^{[2
]}

Kienzle, Andreas ^{[3
]}

Bill, Joachim ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Mat Sci, D-70569 Stuttgart, Germany

[2] Max Planck Inst Intelligent Syst, D-70569 Stuttgart, Germany

[3] SGL Carbon GmbH, D-86405 Meitingen, Germany

来源：

ADVANCED ENGINEERING MATERIALS | 2015年 / 17卷 / 11期

关键词：

C-N CERAMICS; SELF-DIFFUSION; PRECURSOR; FIBER; POLYCARBOSILANE; TEMPERATURE; SYSTEMS; AIR;

D O I：

10.1002/adem.201500064

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon Carbide (SiC) samples with controlled carbon contents are manufactured from polymeric precursors. Based on X-ray diffraction (XRD) data, a correlation of the excess carbon content and the crystallization kinetics of silicon carbide are determined for the obtained pyrolysates. The crystallization mechanisms as well as the corresponding activation energies E-A are also determined. Furthermore, the influence of the carbon content on the oxidation behavior of these pyrolysates is studied. A model for the oxidation of the prepared silicon carbide-based materials is proposed.

引用

页码：1631 / 1638

页数：8

共 30 条

[1] THEORIES OF NORMAL GRAIN-GROWTH IN PURE SINGLE-PHASE SYSTEMS
ATKINSON, HV
[J]. ACTA METALLURGICA, 1988, 36 (03): : 469 - 491
[2] High temperature deformation of precursor-derived amorphous Si-B-C-N ceramics
Baufeld, B
Gu, H
Bill, J
Wakai, F
Aldinger, F
[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1999, 19 (16) : 2797 - 2814
[3] Brook R. J., CERAMIC FABRICATION, P331
[4] A review of the development of three generations of small diameter silicon carbide fibres
Bunsell, AR
Piant, A
[J]. JOURNAL OF MATERIALS SCIENCE, 2006, 41 (03) : 823 - 839
[5] Effect of processing variables on the properties of polysilane ceramic precursors
BushnellWatson, SM
Morris, MJ
Sharp, JH
[J]. POLYMER, 1996, 37 (11) : 2067 - 2076
[6] Crystallisation mechanism of amorphous silicon carbide
Calcagno, L
Musumeci, P
Roccaforte, F
Bongiorno, C
Foti, G
[J]. APPLIED SURFACE SCIENCE, 2001, 184 (1-4) : 123 - 127
[7] A new type of precursor for fibers in the system Si-C
Clade, J
Seider, E
Sporn, D
[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2005, 25 (2-3) : 123 - 127
[8] Coelho A., 2003, TOPAS: General Profile and Structure Analysis Software for Powder Diffraction Data
[9] THERMAL-BEHAVIOR OF POLYMER-DERIVED CERAMICS .1. SI-C AND SI-C-O SYSTEMS FROM BOTH COMMERCIAL AND NEW POLYCARBOSILANE (PCS) PRECURSORS
DELVERDIER, O
MONTHIOUX, M
MOCAER, D
PAILLER, R
[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1993, 12 (01) : 27 - 41
[10] Friede B., 2006, IIBCC 10 INT IN BOND, P135

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