Technology Scaling Challenges and Opportunities of Memory Devices

被引：121

作者：

Lee, Seok-Hee ^{[1
]}

机构：

[1] SK Hynix Inc, 2091 Gyeongchung Daero, Icheon Si 17336, Gyeonggi Do, South Korea

来源：

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2016年

关键词：

D O I：

10.2147/IPRP.S92448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Challenges in scaling of semiconductor memory technologies are reviewed with the focus on DRAM and NAND Flash while demands for memory improvement in the ICT industry are increasing. This paper introduces evolutionary and revolutionary paths to overcome scaling challenges of current and emerging memory technologies along with some promising solutions.

引用

页数：8

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