Proceedings of the 2nd International Symposium on Growth of III Nitrides Syuzennji, Japan 7-9 July, 2008 Preface

被引：0

作者：

Koukitu, Akinori ^{[3
]}

Amano, Hiroshi ^{[2
]}

Fujioka, Hiroshi ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi, Japan

[3] Tokyo Univ Agr & Technol, Grad Sch Engn, Fuchu, Tokyo 183, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 10期

关键词：

This volume of the Journal of Crystal Growth includes a part of papers that were presented at the Second International Symposium on Growth of III-Nitrides (ISGN-2); which was held between the 6th and the 9th of July; 2008 at Laforet Shuzenji; Izu; Japan. ISGN-2 was a continuation of the successful symposium; ISGN-1; which was held in Linköping; Sweden; in 2006. ISGN-2 is sponsored by the Japanese Association for Crystal Growth Cooperation; and by a Grant-in-Aid for Scientific research in Priority Areas: Optoelectronics Frontier by Nitride Semiconductor from The Ministry of Education; Culture; Sports; Science; and Technology; Japan. It should be also noted that ISGN-2 is co-sponsored by the Human Resource Development Program for Scientific Powerhouse; Tokyo University of Agriculture and Technology; and by the Global COE Program Center for Electronic Devices Innovation Osaka University; Japan;

D O I：

10.1016/j.jcrysgro.2009.04.019

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：2759 / 2759

页数：1