Photoenhanced wet oxidation of gallium nitride

被引：65

作者：

Peng, LH ^{[1
]}

Liao, CH

Hsu, YC

Jong, CS

Huang, CN

Ho, JK

Chiu, CC

Chen, CY

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Inst Electroopt Engn, Taipei 10764, Taiwan

[3] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 04期

关键词：

D O I：

10.1063/1.125804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the photo-oxidation process and the corresponding passivation effects on the optical properties of unintentionally doped n-type gallium nitride (GaN). When illuminated with a 253.7 nm mercury line source, oxidation of GaN is found to take place in aqueous phosphorus acid solutions with pH values ranging from 3 to 4. At room temperature, the photo-oxidation process is found reaction-rate limited and has a peak value of 224 nm/h at pH=3.5. Compared with the as-grown GaN layers, threefold enhancement in the photocurrent and photoluminescence response are observed on the oxidized GaN surfaces. These results are attributed to the surface passivation effects due to the deep ultraviolet-enhanced wet oxidation on GaN. (C) 2000 American Institute of Physics. [S0003-6951(00)00704-X].

引用

页码：511 / 513

页数：3

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