Study of Lifetime Degradation in n-type Silicon Due to Oxidation of Boron-rich Layer

被引：0
|
作者：
Ryu, Kyungsun [1 ]
Ok, Young-Woo [1 ]
Choi, Chel-Jong [2 ]
Rohatgi, Ajeet [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, 777 Atlantic Dr, Atlanta, GA 30332 USA
[2] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea
来源：
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年
关键词：
n-type silicon; boron-rich layer; bulk lifetime; thermal oxidation; IRON; MECHANISMS;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Various boron diffusion techniques are being investigated to fabricate n-type Si cells. Thermal oxidation is often used in photovoltaic to remove boron-rich layer (BRL) formed as a byproduct of boron diffusion because it interferes with surface passivation. However, oxidizing the BRL can cause a severe degradation in bulk lifetime. In this paper, high resolution electron microscopy (HREM) was performed to detect the presence of BRL after B diffusion and its removal after subsequent oxidation. In addition, bulk lifetime of n-type Si with BRL was measured after various oxidation conditions to systematically investigate the BRL-induced lifetime degradation mechanism in n-Si. The primary metal impurity responsible for the bulk lifetime degradation was concluded to be Fe in this study.
引用
收藏
页码：2655 / 2658
页数：4
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