Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2

被引：512

作者：

Wu, Xu ^{[1
,2
]}

Shao, Yan ^{[1
,2
]}

Liu, Hang ^{[1
,2
]}

Feng, Zili ^{[1
,2
]}

Wang, Ye-Liang ^{[1
,2
,3
,4
]}

Sun, Jia-Tao ^{[1
,2
]}

Liu, Chen ^{[5
]}

Wang, Jia-Ou ^{[5
]}

Liu, Zhong-Liu ^{[1
,2
]}

Zhu, Shi-Yu ^{[1
,2
]}

Wang, Yu-Qi ^{[1
,2
]}

Du, Shi-Xuan ^{[1
,2
,3
,4
]}

Shi, You-Guo ^{[1
,2
]}

Ibrahim, Kurash ^{[5
]}

Gao, Hong-Jun ^{[1
,2
,3
,4
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Univ Chinese Acad Sci, Beijing 100190, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China

[4] Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China

[5] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China

来源：

ADVANCED MATERIALS | 2017年 / 29卷 / 11期

基金：

中国国家自然科学基金;

关键词：

ELECTRON LOCALIZATION; GERMANENE; SILICENE; LAYER;

D O I：

10.1002/adma.201605407

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Monolayer antimonene is fabricated on PdTe2 by an epitaxial method. Monolayer antimonene is theoretically predicted to have a large bandgap for nanoelectronic devices. Air-exposure experiments indicate amazing chemical stability, which is great for device fabrication. A method to fabricate high-quality monolayer antimonene with several great properties for novel electronic and optoelectronic applications is provided.

引用

页数：7

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