Correlated optical and structural analyses of individual GaAsP/GaP core-shell nanowires

被引：7

作者：

Himwas, C. ^{[1
,2
]}

Collin, S. ^{[1
]}

Chen, H-L ^{[1
]}

Patriarche, G. ^{[1
]}

Oehler, F. ^{[1
]}

Travers, L. ^{[1
]}

Saket, O. ^{[1
]}

Julien, F. H. ^{[1
]}

Harmand, J-C ^{[1
]}

Tchernycheva, M. ^{[1
]}

机构：

[1] Univ Paris Saclay, Ctr Nanosci & Nanotechnol, UMR CNRS 9001, Univ Paris Sud, 10 Blvd Thomas Gobert, F-91120 Palaiseau, France

[2] Chulalongkorn Univ, Fac Engn, Dept Elect Engn, Semicond Device Res Lab, 254 Phayathai Rd, Bangkok 10330, Thailand

来源：

NANOTECHNOLOGY | 2019年 / 30卷 / 30期

基金：

欧洲研究理事会;

关键词：

nanowire; GaAsP/GaP core-shell; molecular beam epitaxy; cathodoluminescence; SOLAR-CELLS; SURFACE PASSIVATION; EFFICIENCY; ABSORPTION; IMPACT; GROWTH; GA;

D O I：

10.1088/1361-6528/ab1760

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the structural and optical properties of GaAs0.7P0.3/GaP core-shell nanowires (NWs) for future photovoltaic applications. The NWs are grown by self-catalyzed molecular beam epitaxy. Scanning transmission electron microscopy (STEM) analyses demonstrate that the GaAsP NW core develops an inverse-tapered shape with a formation of an unintentional GaAsP shell having a lower P content. Without surface passivation, this unintentional shell produces no luminescence because of strong surface recombination. However, passivation of the surface with a GaP shell leads to the appearance of a secondary peak in the luminescence spectrum arising from this unintentional shell. The attribution of the luminescence peaks is confirmed by correlated cathodoluminescence and STEM analyses of the same NW.

引用

页数：10

共 46 条

[11] In situ passivation of GaAsP nanowires [J].