Investigation of defect clusters in ion-irradiated Ni and NiCo using diffuse X-ray scattering and electron microscopy

被引:26
作者
Olsen, Raina J. [1 ]
Jin, Ke [1 ,2 ]
Lu, Chenyang [3 ]
Beland, Laurent K. [1 ]
Wang, Lumin [3 ]
Bei, Hongbin [1 ]
Specht, Eliot D. [1 ]
Larson, Bennett C. [1 ]
机构
[1] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
[2] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[3] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA
关键词
Irradiation damage; Asymptotic diffuse X-ray scattering; Stacking fault tetrahedra; Nickel; Alloy; STACKING-FAULT TETRAHEDRA; PURE NI; DAMAGE; NICKEL; TEMPERATURE; EVOLUTION; CASCADES; BEHAVIOR; ALLOYS; ATOMS;
D O I
10.1016/j.jnucmat.2015.11.030
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The nature of defect clusters in Ni and Ni-50 Co-50 (NiCo) irradiated at room temperature with 2-16 MeV Ni ions is studied using asymptotic diffuse X-ray scattering and transmission electron microscopy (TEM). Analysis of the scattering data provides separate size distributions for vacancy and interstitial type defect clusters, showing that both types of defect clusters have smaller sizes and higher densities in NiCo than in Ni. Diffuse scattering results show good quantitative agreement with TEM size distributions for cluster sizes greater than 2 nm in diameter, but we find that TEM under represents the number of defect clusters <= 2 nm, which comprise the majority of vacancy clusters in NiCo. Interstitial dislocation loops and stacking fault tetrahedra are identified by TEM. Comparison of diffuse scattering lineshapes to those calculated for dislocation loops and SFI's indicates that most of the vacancy clusters are SFTs. Published by Elsevier B.V.
引用
收藏
页码:153 / 161
页数:9
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