Long electron cyclotron resonance plasma source for reactive sputtering

被引:3
作者
Yasui, T
Nakase, K
Tahara, H
Yoshikawa, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 10期
关键词
ECR plasma; long plasma source; reactive sputtering; TiN; slot antenna;
D O I
10.1143/JJAP.35.5495
中图分类号
O59 [应用物理学];
学科分类号
摘要
A long electron cyclotron resonance (ECR) plasma source using slot antennas and permanent magnets was developed for large-area plasma processing. Microwaves were radiated from the slot antennas on a 30-cm-long rectangular waveguide and efficiently absorbed to plasma by ECR magnetic fields of permanent magnets. The plasma source operated above 0.014 Pa for Ar at 437W. The maximum plasma density was 1.77 x 10(17) m(-3) at 437W for 0.078 Pa. The spatial plasma uniformity was +/-8.2% within 200 mm length at 437W for 0.078 Pa. The plasma source was experimentally applied to reactive sputter deposition of TiN film using a. mixture of Ar and N-2. Titanium nitride film was successfully deposited with +/-14.1% spatial uniformity within 160 mm length. From X-ray photoelectron spectroscopic analysis, Ti-N bonds were newly created and the atomic composition ratio was nearly equal to the stoichiometric value of TiN at a N-2/Ar mass flow rate of 1.5.
引用
收藏
页码:5495 / 5500
页数:6
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