Growth control of carbon nanotubes by plasma-enhanced chemical vapor deposition and reactive ion etching

被引：3
|
作者：
Sato, Hideki
Sakai, Takamichi
Matsubayashi, Mai
Hata, Koichi
Miyake, Hideto
Hiramatsu, Kazumasa
Oshita, Akinori
Saito, Yahachi
机构：
[1] Mie Univ, Fac Engn, Tsu, Mie 5148507, Japan
[2] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648403, Japan
来源：
VACUUM | 2006年 / 80卷 / 07期
关键词：
carbon nanotubes; plasma-enhanced chemical vapor deposition; reactive ion etching; nanotips; field emitter;
D O I：
10.1016/j.vacuum.2005.11.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel process for growth of carbon nanotubes using plasma processes is reported. This process consists of formation of nanotips on substrate and growth of carbon nanotubes on it. The formation of the nanotips, which were formed under an intention to control formation of catalyst nanoparticles, was carried out on substrates by reactive ion etching. After the nanotips formation, the carbon nanotubes were grown on the substrate by plasma-enhanced chemical vapor deposition. Our results showed that the introduction of the nanotips on surface gave lower density and smaller diameter growth of carbon nanotubes than those without the structure. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：798 / 801
页数：4
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