Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

被引:19
作者
Angermann, Heike [1 ]
Rappich, Joerg [1 ]
Klimm, Carola [1 ]
机构
[1] Helmholtz Zentrum Berlin Mat & Energie, Inst Siliziumphotovolta, D-12489 Berlin, Germany
来源
CENTRAL EUROPEAN JOURNAL OF PHYSICS | 2009年 / 7卷 / 02期
关键词
texturisation of solar cell substrates; silicon surface passivation; interface states; recombination losses; surface photovoltage; insitu photoluminescence measurements; electron microscopy; SURFACE-STATE DENSITY; HYDROGEN TERMINATION; PHOTOLUMINESCENCE; RECOMBINATION;
D O I
10.2478/s11534-009-0055-3
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
On textured n-type silicon substrates for solar cell manufacturing, the relation between light trapping behavior, structural imperfections, energetic distribution of interface state densities and interface recombination losses were investigated by applying surface sensitive techniques. The field-modulated surface photovoltage (SPV), in-situ photoluminescence (PL) measurements, total hemispherical UV-NIR-reflectance measurements and electron microscopy (SEM) were employed to yield detailed information on the influence of wet-chemical treatments on preparation induced micro-roughness and electronic properties of polished and textured silicon substrates. It was shown that isotropic as well as anisotropic etching of light trapping structures result in high surface micro-roughness and density of interface states. Removing damaged surface layers in the nm range by wet-chemical treatments, the density of these states and the related interface recombination loss can be reduced. In-situ PL measurements were applied to optimise HF-treatment times aimed at undamaged, oxide-free and hydrogen-terminated substrate surfaces as starting material for subsequent solar cell preparations.
引用
收藏
页码:363 / 370
页数:8
相关论文
共 27 条
[1]   The preparation of flat H-Si(111) surfaces in 40% NH4F revisited [J].
Allongue, P ;
de Villeneuve, CH ;
Morin, S ;
Boukherroub, R ;
Wayner, DDM .
ELECTROCHIMICA ACTA, 2000, 45 (28) :4591-4598
[2]   Passivation of structured p-type silicon interfaces: Effect of surface morphology and wet-chemical pre-treatment [J].
Angermann, H. .
APPLIED SURFACE SCIENCE, 2008, 254 (24) :8067-8074
[3]   Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment [J].
Angermann, H. ;
Korte, L. ;
Rappich, J. ;
Conrad, E. ;
Sieber, I. ;
Schmidt, M. ;
Huebener, K. ;
Hauschild, J. .
THIN SOLID FILMS, 2008, 516 (20) :6775-6781
[4]   Characterization of wet-chemically treated silicon interfaces by surface photovoltage measurements [J].
Angermann, H .
ANALYTICAL AND BIOANALYTICAL CHEMISTRY, 2002, 374 (04) :676-680
[5]   Passivation of textured substrates for a-Si:H/c-Si hetero-junction solar cells: Effect of wet-chemical smoothing and intrinsic a-Si:H interlayer [J].
Angermann, H. ;
Conrad, E. ;
Korte, L. ;
Rappich, J. ;
Schulze, T. F. ;
Schmidt, M. .
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 159-60 :219-223
[6]  
ANGERMANN H, 2007, 23 EUR PHOT SOL EN C, P1422
[7]   INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].
CHABAL, YJ ;
HIGASHI, GS ;
RAGHAVACHARI, K ;
BURROWS, VA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :2104-2109
[8]   CALCULATION OF SURFACE GENERATION AND RECOMBINATION VELOCITIES AT THE SI-SIO2 INTERFACE [J].
EADES, WD ;
SWANSON, RM .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4267-4276
[9]   Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides [J].
Hardtdegen, H ;
Kaluza, N ;
Steins, R ;
Cho, YS ;
Sofer, Z ;
Zorn, M ;
Haberland, K ;
Zettler, JT .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (13) :2581-2586
[10]  
Hattori T., 1998, Ultraclean surface processing of silicon wafers. Secrets of VLSI manufacturing, P437