Photoelectron spectroscopy study of PuCoGa5 thin films

被引：12

作者：

Eloirdi, R. ^{[1
]}

Havela, L. ^{[2
]}

Gouder, T. ^{[1
]}

Shick, A. ^{[3
]}

Rebizant, J. ^{[1
]}

Huber, F. ^{[1
]}

Caciuffo, R. ^{[1
]}

机构：

[1] Commiss European Communities, Joint Res Ctr, Inst Transuranium Elements, D-76175 Karlsruhe, Germany

[2] Charles Univ Prague, Dept Condensed Matter Phys, CZ-12116 Prague 2, Czech Republic

[3] Acad Sci Czech Republ, Inst Phys, Prague 8, Czech Republic

来源：

JOURNAL OF NUCLEAR MATERIALS | 2009年 / 385卷 / 01期

关键词：

SUPERCONDUCTIVITY;

D O I：

10.1016/j.jnucmat.2008.08.059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin layers of PuCoGax (x = 4 to 18) have been prepared by dc sputtering from a PuCoGa5 single crystal target, and investigated in situ by X-ray and ultraviolet photoelectron spectroscopy. We could achieve broad composition variability (monitored by the Pu-4f, Co-2p and Ga-2p core-level spectra). The results are compared to the valence band spectra reported previously for PuCoGa5. Our experiments reveal that some Ga excess (PuCoGa approximate to 7) was likely for those original data. We demonstrate that there is a tendency to the segregation of Ga at the surface, which has an important effect on the valence band spectra. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：8 / 10

页数：3

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