Giant optical anisotropy in cylindrical self-assembled InAs/GaAs quantum rings

被引：6

作者：

Zhang, Weiwei ^{[1
]}

Su, Zhiqiang ^{[1
]}

Gong, Ming ^{[1
]}

Li, Chuan-Feng ^{[1
]}

Guo, Guang-Can ^{[1
]}

He, Lixin ^{[1
]}

机构：

[1] Chinese Acad Sci, Univ Sci & Technol China, Key Lab Quantum Informat, Hefei 230026, Peoples R China

来源：

EPL | 2008年 / 83卷 / 06期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1209/0295-5075/83/67004

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using a single-particle atomistic pseudopotential method followed by a configuration interaction treatment to many-particle interactions, we investigate the geometry, electronic structures and optical transitions of a self-assembled InAs/GaAs quantum ring (QR), with its shape changing continuously from a lens-shaped quantum dot (QD) to a nearly one-dimensional ring. We find that the biaxial strain inside the ring is strongly asymmetric in the plane perpendicular to the QR growth direction, leading to a giant optical anisotropy. Copyright (C) EPLA, 2008

引用

页数：5

共 50 条

[31] Polaron relaxation in InAs/GaAs self-assembled quantum dots [J].

Sauvage, S ;

Boucaud, P ;

Bras, F ;

Fishman, G ;

Lobo, RPSM ;

Glotin, F ;

Prazeres, R ;

Ortega, JM ;

Gérard, JM .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 238 (02) :254-257

[32] Morphology of self-assembled InAs quantum dots on GaAs(001). [J].

Arciprete, F ;

Patella, F ;

Fanfoni, M ;

Nufris, S ;

Placidi, E ;

Schiumarini, D ;

Balzarotti, A .

SELF-ASSEMBLY PROCESSES IN MATERIALS, 2002, 707 :179-184

[33] TEM study of InAs self-assembled quantum dots in GaAs [J].

Müller, E ;

Ribeiro, E ;

Heinzel, T ;

Ensslin, K ;

Medeiros-Ribeiro, G ;

Petroff, PM .

THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 :38-41

[34] Annealing effects of self-assembled InAs/GaAs quantum dots [J].

Inst of Semiconductors, CAS, Beijing, China .

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 1997, 16 (06) :455-458

[35] Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots [J].

Fry, PW ;

Itskevich, IE ;

Parnell, SR ;

Finley, JJ ;

Wilson, LR ;

Schumacher, KL ;

Mowbray, DJ ;

Skolnick, MS ;

Al-Khafaji, M ;

Cullis, AG ;

Hopkinson, M ;

Clark, JC ;

Hill, G .

PHYSICAL REVIEW B, 2000, 62 (24) :16784-16791

[36] Electronic structure of InAs/GaAs self-assembled quantum dots [J].

Cusack, MA ;

Briddon, PR ;

Jaros, M .

PHYSICAL REVIEW B, 1996, 54 (04) :R2300-R2303

[37] TEM study of InAs self-assembled quantum dots in GaAs [J].

Müller, E ;

Ribeiro, E ;

Heinzel, T ;

Ensslin, K ;

Medeiros-Ribeiro, G ;

Petroff, PM .

THIN SOLID FILMS, 1998, 336 (1-2) :38-41

[38] Gain characteristics of self-assembled InAs/GaAs quantum dots [J].

Arzberger, M ;

Böhm, G ;

Amann, MC ;

Abstreiter, G .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (03) :827-831

[39] Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots [J].

Fry, PW ;

Mowbray, DJ ;

Itskevich, IE ;

Skolnick, MS ;

Barker, JA ;

O'Reilly, EP ;

Hopkinson, M ;

Al-Khafaji, M ;

David, JPR ;

Cullis, AG ;

Hill, G .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (02) :497-502

[40] Ellipsometric study of self-assembled InAs/GaAs quantum dots [J].

Kyung Hee Univ, Seochonri, Korea, Republic of .

Jpn J Appl Phys Part 2 Letter, 3 A (L245-L247)

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