Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy

被引：16
作者：
Nishida, Keisuke [1 ]
Xu, Xuejun [1 ]
Sawano, Kentarou [1 ]
Maruizumi, Takuya [1 ]
Shiraki, Yasuhiro [1 ]
机构：
[1] Tokyo City Univ, Adv Res Labs, Res Ctr Silicon Nanosci, Setagaya Ku, Tokyo 1580082, Japan
来源：
THIN SOLID FILMS | 2014年 / 557卷
关键词：
Germanium; Tensile strain; Molecular beam epitaxy; Sb doping; Microdisk; OPTICAL GAIN; MU-M; SILICON;
D O I：
10.1016/j.tsf.2013.10.082
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly n-doped, tensile-strained Ge is grown on Si substrate with a three-step method by solid source molecular beam epitaxy. Tensile strain of 0.22% is obtained in the Ge film due to the thermal expansion mismatch between Si and Ge. Activated n-type doping concentration of 5.0x1018 cm(-3) is also realized by Sb in-situ doping during epitaxy and post-growth annealing. Strong photoluminescence (PL) is observed around 1.5-1.6 mu m from direct band gap transition of Ge at room-temperature. Starting from this material, free-standing microdisks are fabricated by electron beam lithography, dry etching of Ge and subsequent Si undercutting. Significantly enhanced light emission and sharp resonant peaks with Q-factor approaching 800, are observed in the PL spectra. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码：66 / 69
页数：4
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