Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy

被引：16

作者：

Nishida, Keisuke ^{[1
]}

Xu, Xuejun ^{[1
]}

Sawano, Kentarou ^{[1
]}

Maruizumi, Takuya ^{[1
]}

Shiraki, Yasuhiro ^{[1
]}

机构：

[1] Tokyo City Univ, Adv Res Labs, Res Ctr Silicon Nanosci, Setagaya Ku, Tokyo 1580082, Japan

来源：

THIN SOLID FILMS | 2014年 / 557卷

关键词：

Germanium; Tensile strain; Molecular beam epitaxy; Sb doping; Microdisk; OPTICAL GAIN; MU-M; SILICON;

D O I：

10.1016/j.tsf.2013.10.082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly n-doped, tensile-strained Ge is grown on Si substrate with a three-step method by solid source molecular beam epitaxy. Tensile strain of 0.22% is obtained in the Ge film due to the thermal expansion mismatch between Si and Ge. Activated n-type doping concentration of 5.0x1018 cm(-3) is also realized by Sb in-situ doping during epitaxy and post-growth annealing. Strong photoluminescence (PL) is observed around 1.5-1.6 mu m from direct band gap transition of Ge at room-temperature. Starting from this material, free-standing microdisks are fabricated by electron beam lithography, dry etching of Ge and subsequent Si undercutting. Significantly enhanced light emission and sharp resonant peaks with Q-factor approaching 800, are observed in the PL spectra. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：66 / 69

页数：4

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