Annealing Effects on Titanium Dioxide Films by Sol-Gel Spin Coating Method

被引：0

作者：

Nadzirah, Sh. ^{[1
]}

Hashim, U. ^{[2
]}

机构：

[1] Univ Malaysia Perlis, Nanostruct Lab On Chip Res Grp, Kangar 01000, Perlis, Malaysia

[2] Univ Malaysia Perlis, Inst Nano Elect Engn, Nanostruct Lab On Chip Res Grp, Kangar, Perlis, Malaysia

来源：

2013 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM 2013) | 2013年

关键词：

Titanium dioxide; Sol gel; Annealing effect; TIO2; TEMPERATURE; ANATASE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TiO2 thin films were deposited on silicon dioxide substrates using a sol-gel method. The surface morphologies, structural and electrical properties at different annealing temperatures were studied using atomic force microscopy (AFM), X-ray diffraction (XRD) and Kiethley 6485 pico- ammeter. The XRD pattern displayed the presence of anatase and rutile structures even at low temperature while AFM displayed that the annealing temperature affects the particle size. Current-voltage (I-V) characteristic revealed that the conductivity decreased as the annealing temperature varied from 300 to 900 degrees C.

引用

页码：159 / 162

页数：4

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