共 37 条
First-principles study on doping effect of Sn in BiF3 as cathode materials for Li-ion battery
被引:3
作者:
Yang, Zhenhua
[1
,2
,3
]
Tan, Shuncheng
[1
,2
]
Huang, Yunqing
[3
]
Wang, Xianyou
[4
]
Pei, Yong
[4
]
机构:
[1] Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Mat Design & Preparat Technol Hunan Prov, Xiangtan 411105, Hunan, Peoples R China
[2] Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Hunan, Peoples R China
[3] Xiangtan Univ, Sch Math & Computat Sci, Hunan Key Lab Computat & Simulat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China
[4] Xiangtan Univ, Sch Chem, Xiangtan 411105, Hunan, Peoples R China
基金:
中国国家自然科学基金;
关键词:
First-principles calculations;
Formation energy;
Vacancy defect;
Electrochemical properties;
ELECTROCHEMICAL PERFORMANCE;
ENERGY-STORAGE;
LITHIUM;
NANOCOMPOSITES;
CONDUCTIVITY;
FLUORIDES;
METAL;
D O I:
10.1016/j.cap.2015.10.004
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
First-principles calculations were carried out to investigate the structural relaxation, formation energy, electronic structure and electrochemical properties of Sn-doped BiF3. When Sn was doped into BiF3, two common oxidation states of Sn, +2 and +4, were considered. In addition, some typical neutral and charge defects (Sn-Bi(0), Sn-Bi(1-), Sn-Bi(1+), V-Bi1(2-) V-Bi2(2-) and V-F(0)) were discussed in detail. Calculated formation energies indicate that Sn4+ ion is much easier to dope into BiF3 than Sn2+ ion. When Fermi level lies at the bottom of conduction band, Sn1/2Bi30/32F3 with V-Bi1(2-) (Bi vacancy defect) induced by Sn4+ ion doping has the most stable structure under the rich-F growth condition. Here, Delta mu(Sn), Delta mu(Bi) and Delta mu(F) are -13.18 eV, -9.71 eV and 0, respectively. What's more, the crystal structure, electronic structure and electrochemical properties of Sn1/32Bi30/32F3 with V-Bi1(2-) were further investigated. It is found that the crystal volume of Sn1/32Bi30/32F3 with V-Bi1(2-) is larger than that of pure BiF3 because the length of Bi-F bond around V-Bi1(2-) in the Sn1/32Bi30/32F3 becomes much longer relative to the length of Bi-F bond in the pure BiF3. Besides, the calculated band gap of Sn1/32Bi30/32F3 with V-Bi1(2-) is 2.70 eV, which is smaller than that of pure BiF3. Furthermore, Sn1/32Bi30/32F3 with V-Bi1(2-) has better theoretical voltage and theoretical capacity than pure BiF3. (C) 2015 Elsevier B.V. All rights reserved.
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页码:12 / 19
页数:8
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