Ga-related photoluminescence lines in Ga-doped ZnO grown by plasma-assisted molecular-beam epitaxy

被引：57

作者：

Yang, Z. ^{[1
]}

Look, D. C. ^{[2
]}

Liu, J. L. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 07期

基金：

美国国家科学基金会;

关键词：

carrier density; excitons; gallium; Hall effect; II-VI semiconductors; photoluminescence; semiconductor epitaxial layers; vacancies (crystal); wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3080204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature photoluminescence (PL) and temperature-dependent Hall-effect (T-Hall) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8x10(18) to 1.8x10(20) cm(-3), the dominant PL line at 9 K changes from I-1 (3.368-3.371 eV) to I-DA (3.317-3.321 eV), and finally to I-8 (3.359 eV). The dominance of I-1, due to ionized-donor bound excitons, is unexpected in n-type samples but is shown to be consistent with the T-Hall results. We also show that I-DA has characteristics of a donor-acceptor-pair transition, and use a detailed, quantitative analysis to argue that it arises from Ga-Zn donors paired with Zn-vacancy (V-Zn) acceptors. In this analysis, the Ga-Zn(0/+) energy is well-known from two-electron satellite transitions, and the V-Zn(0/-) energy is taken from a recent theoretical calculation.

引用

页数：3

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