Microwave Characteristic of SiON Thin Film Surface Passivation on Low Resistivity Silicon Wafer

被引：0

作者：

Wang, Sin-Pei ^{[1
]}

Tai, Tzu-Chun ^{[2
]}

Lin, Jia-Hao ^{[3
]}

Hung, Cheng-Yuan ^{[4
]}

Wu, Hung-Wei ^{[1
]}

Wang, Yeong-Her ^{[2
,5
]}

Liu, Shih-Kun ^{[3
]}

机构：

[1] Kun Shan Univ, Dept Comp & Commun, Tainan, Taiwan

[2] Natl Cheng Kung Univ, Dept Photon, Tainan, Taiwan

[3] Natl Kaohsiung Univ Sci & Technol, Dept Elect Engn, Kaohsiung, Taiwan

[4] Natl Cheng Kung Univ, Met Ind Res & Dev Ctr, Med Devices & Optoelect Equipment Dept, Tainan, Taiwan

[5] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Dept Elect Engn, Tainan, Taiwan

来源：

PROCEEDINGS OF 4TH IEEE INTERNATIONAL CONFERENCE ON APPLIED SYSTEM INNOVATION 2018 ( IEEE ICASI 2018 ) | 2018年

关键词：

FG-CPW; surface passivatoin; PECVD; SiON; POWER-HANDLING CAPABILITY; MICROSTRIP LINES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study presents the amorphous silicon-oxy-nitride (SiON) thin film surface passivation layer depositing by very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) for applying on the application of surface passivation on standard low-resistivity silicon (LR-Si) substrate. The finite-ground coplanar waveguide (FG-CPW) line is fabricated on the SiON/LR-Si structure for investigating the microwave properties. The proposed finite-ground coplanar waveguide line is measured by accurate microwave on-wafer analysis platform up to 60 GHz. The surface passivation layer can improve microwave attenuation of the FG-CPW line. This method can be applied in radio frequency integrated circuit (RFIC).

引用

页码：1125 / 1128

页数：4

共 11 条

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