Factors affecting preparation of high specific surface area silicon carbide

被引：0

作者：

Lin Jian-Xin

Zheng Yong

Zheng Ying

Wei Ke-Mei ^{[1
]}

机构：

[1] Fuzhou Univ, Natl Engn Res Ctr Chem Fertilizer Catalyst, Fuzhou 350002, Peoples R China

[2] Fujian Normal Univ, Coll Chem & Mat Sci, Fuzhou 350007, Peoples R China

来源：

CHINESE JOURNAL OF INORGANIC CHEMISTRY | 2006年 / 22卷 / 10期

关键词：

sol-gel; silicon carbide; carbothermal reduction; high specific surface area;

D O I：

暂无

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

A sol-gel process catalyzed by oxalic acid was used for the preparation of SIC precursor from raw materials of tetraethyl orthosilicate (TEOS) and sucrose. The precursor thus obtained was homogeneous. Sintered with a certain heating program (1350 similar to 1600 degrees C) in an argon flow, the precursor was converted into the high surface area SIC. The effect of the amount of water, nickel nitrate and the molar ratio of C/Si on the surface area of SIC were studied. The results show that when the molar ratio of H2O/TEOS, C/Si and nickel nitrate/TEOS is 7.5, 4, 0.005, respectively, the gel formation time is the shortest. The temperature for carbothermal reduction could be lowered by 200 degrees C when the nickel nitrate is added into the precursor.

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页码：1778 / 1782

页数：5

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