On the analysis of radiation-induced failures in the AXI interconnect module

Due to the increasing demand for high performance in embedded systems, devices such as SRAM-based programmable devices are becoming an appealing solution to reach high performance with limited costs. However, SRAM-based programmable devices are subjected to various sources of radiation-induced faults that affect their reliability, such as ionizing radiation and particles, even at sea-level. In this paper, we evaluate the reliability of the interconnection module, implemented on the programmable hardware, against radiation-induced faults in the configuration layer. To do so, we performed a fault injection campaign in order to emulate the radiation-induced effects impacting the configuration memory of AP-SoC Zynq 7000, specifically targeting the configuration memory section programming the interconnection module implemented on the programmable logic. This interconnection module is a crucial element for a wide range of applications and mitigation techniques such as hardware-accelerated designs, Dynamic Partial Reconfiguration, or Triple Modular Redundancy; especially if they are adopted to achieve high performance, high bandwidth and high reliability. The fault injection results have been analyzed and classified accordingly with the effect observed on the processor-system side in terms of availability and fault model affecting data computed by cores implemented on the programmable logic side.