High-temperature 4.5-mu m type-II quantum-well laser with Auger suppression

被引：54

作者：

Felix, CL ^{[1
]}

Meyer, JR ^{[1
]}

Vurgaftman, I ^{[1
]}

Lin, CH ^{[1
]}

Murry, SJ ^{[1
]}

Zhang, D ^{[1
]}

Pei, SS ^{[1
]}

机构：

[1] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 06期

基金：

美国国家航空航天局;

关键词：

optical pumping; pulsed lasers; quantum-well lasers; semiconductor device measurements; semiconductor device modeling; semiconductor lasers; wavelength measurement;

D O I：

10.1109/68.584973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser emission at 4.2-4.5 mu m has been observed at temperatures up to 310 K in pulsed optical pumping experiments on type-II quantum-well (QW) lasers with four constituents in each period (InAs-Ga1-xInxSb-InAs-AlSb). The characteristic temperature, T-0, is 41 K, and a peak output power exceeding 2 W/facet is observed at 200 K, The power conversion efficiency per facet of approximate to 0.2% up to 200 K is within a factor of 2 of the theoretical value, The 300 K Auger coefficient of 4 x 10(-27) cm(6)/s extracted from the threshold pump intensity demonstrates that Auger losses have been suppressed by a factor of four.

引用

页码：734 / 736

页数：3

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