An efficient photoresist development simulator based on cellular automata with experimental verification

被引:35
作者
Karafyllidis, I [1 ]
Hagouel, PI
Thanailakis, A
Neureuther, AR
机构
[1] Democritus Univ Thrace, Dept Elect & Comp Engn, Lab Elect & Elect Mat Technol, GR-67100 Xanthi, Greece
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
关键词
cellular automata; development; modeling; photolithography; simulation;
D O I
10.1109/66.827346
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An efficient and practical photoresist development simulator based on cellular automata is presented. Image reversal and chemical amplification processes are also simulated using this simulator. To verify the simulator, a series of experiments have been designed and performed using the Shipley SNR-248 negative resist, a stepper, and a deep ultraviolet source at 248 nm. Experiments were performed for periodic and isolated lines with pitches 300, 400, 500, and 1000 nm, for exposure energy doses of 11, 13, 17, and 23 mJ/cm(2), and with developer temperatures of 0, 20, and 80 degrees C. In all cases, the simulator results were found to be in very good agreement with the corresponding experimental results. The simulator has also successfully reproduced the incomplete opening effect observed in the case of close-spaced parallel lines.
引用
收藏
页码:61 / 75
页数:15
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