A 77 GHz SiGe power amplifier for potential applications in automotive radar systems

被引：67

作者：

Pfeiffer, UR ^{[1
]}

Reynolds, SK ^{[1
]}

Floyd, BA ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年

关键词：

power amplifier; W-band; 77; GHz; automotive radar;

D O I：

10.1109/RFIC.2004.1320535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present the performance of a 77 GHz power amplifier for potential applications directed towards automotive radar systems. The circuit was fabricated in a SiGe bipolar pre-production technology. A balanced two-stage common emitter circuit topology was used to achieve 6.1 dB of power gain at 77 GHz and 11.6 dBm output power at 1 dB compression. The power amplifier uses a single 2.5 V supply and was fully integrated (including matching elements) to demonstrate its low-cost potential. First experimental results show its broad-band characteristic from 40 GHz to 80 GHz and its temperature dependence up to 130 degreesC.

引用

页码：91 / 94

页数：4

共 9 条

[1] A 77-GHz MMIC power amplifier for automotive radar applications [J].

Chang, HY ;

Wang, H ;

Yu, M ;

Shu, YH .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2003, 13 (04) :143-145

[2] HIGH-PERFORMANCE AUTOMOTIVE RADAR FOR AUTOMATIC AICC [J].

ERIKSSON, LH ;

AS, BO .

IEEE AEROSPACE AND ELECTRONIC SYSTEMS MAGAZINE, 1995, 10 (12) :13-18

[3]

JAGANNATHAN B, 2002, IEEE ELECT DEVICE LT, V23

[4]

Jrvinen E., 2001, IEEE MTT S INT MICR, V1, P507

[5]

Li H, 2003, TG IEEE GAL ARS, P263

[6]

REYNOLDS S, 2004, IEEE INT SOL STAT CI

[7] A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits [J].

Rickelt, M ;

Rein, HM .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2002, 37 (09) :1184-1197

[8]

Rickert R, 2001, ERNAHRUNGS UMSCHAU, V48, P4

[9]

SINGH R, 2003, SILICON GEMANIUM TEC

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