Control of p- and n-type conductivities in Li-doped ZnO thin films

被引：146

作者：

Lu, J. G. ^{[1
]}

Zhang, Y. Z. ^{[1
]}

Ye, Z. Z. ^{[1
]}

Zeng, Y. J. ^{[1
]}

He, H. P. ^{[1
]}

Zhu, L. P. ^{[1
]}

Huang, J. Y. ^{[1
]}

Wang, L. ^{[1
]}

Yuan, J. ^{[1
]}

Zhao, B. H. ^{[1
]}

Li, X. H. ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Silicon Mat, Hangzhou 310027, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2354034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Li-doped ZnO films were prepared by pulsed laser deposition. The carrier type could be controlled by adjusting the growth conditions. In an ionized oxygen atmosphere, p-type ZnO was achieved, with the hole concentration of 6.04x10(17) cm(-3) at an optimal Li content of 0.6 at. %, whereas ZnO exhibited n-type conductivity in a conventional O-2 growth atmosphere. At a Li content of more than 1.2 at. % only high-resistivity ZnO was obtained. The amount of Li introduced into ZnO and the relative concentrations of such defects as Li substitutions and interstitials could play an important role in determining the conductivity of films. (c) 2006 American Institute of Physics.

引用

页数：3

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