Control of p- and n-type conductivities in Li-doped ZnO thin films

被引：145

作者：

Lu, J. G. ^{[1
]}

Zhang, Y. Z. ^{[1
]}

Ye, Z. Z. ^{[1
]}

Zeng, Y. J. ^{[1
]}

He, H. P. ^{[1
]}

Zhu, L. P. ^{[1
]}

Huang, J. Y. ^{[1
]}

Wang, L. ^{[1
]}

Yuan, J. ^{[1
]}

Zhao, B. H. ^{[1
]}

Li, X. H. ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Silicon Mat, Hangzhou 310027, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2354034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Li-doped ZnO films were prepared by pulsed laser deposition. The carrier type could be controlled by adjusting the growth conditions. In an ionized oxygen atmosphere, p-type ZnO was achieved, with the hole concentration of 6.04x10(17) cm(-3) at an optimal Li content of 0.6 at. %, whereas ZnO exhibited n-type conductivity in a conventional O-2 growth atmosphere. At a Li content of more than 1.2 at. % only high-resistivity ZnO was obtained. The amount of Li introduced into ZnO and the relative concentrations of such defects as Li substitutions and interstitials could play an important role in determining the conductivity of films. (c) 2006 American Institute of Physics.

引用

页数：3

共 18 条

[1] On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide -: art. no. 112112
Barnes, TM
Olson, K
Wolden, CA
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (11) : 1 - 3
[2] Systematic XPS studies of metal oxides, hydroxides and peroxides
Dupin, JC
Gonbeau, D
Vinatier, P
Levasseur, A
[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2000, 2 (06) : 1319 - 1324
[3] Possible p-type doping with group-I elements in ZnO -: art. no. 115210
Lee, EC
Chang, KJ
[J]. PHYSICAL REVIEW B, 2004, 70 (11) : 115210 - 1
[4] As-doped p-type ZnO produced by an evaporation/sputtering process
Look, DC
Renlund, GM
Burgener, RH
Sizelove, JR
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (22) : 5269 - 5271
[5] P-type doping and devices based on ZnO
Look, DC
Claftin, B
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03): : 624 - 630
[6] p-type ZnO films deposited by DC reactive magnetron sputtering at different ammonia concentrations
Lu, JG
Zhang, YZ
Ye, ZZ
Wang, L
Zhao, BH
Huang, JY
[J]. MATERIALS LETTERS, 2003, 57 (22-23) : 3311 - 3314
[7] p-type conduction in N-Al co-doped ZnO thin films
Lu, JG
Ye, ZZ
Zhuge, F
Zeng, YJ
Zhao, BH
Zhu, LP
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3134 - 3135
[8] Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films
Nakano, Y
Morikawa, T
Ohwaki, T
Taga, Y
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (17)
[9] Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition -: art. no. 122103
Oh, MS
Kim, SH
Seong, TY
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (12) : 1 - 3
[10] Park CH, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.073202

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