Room temperature operation of 1.55 μm wavelength-range GaN/AlN quantum well intersubband photodetectors

被引：9

作者：

Uchida, Hiroyuki ^{[1
]}

Matsui, Satoshi ^{[1
]}

Holmstroem, Petter ^{[1
]}

Kikuchi, Akihiko ^{[1
]}

Kishino, Katsumi ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2005年 / 2卷 / 22期

关键词：

GaN/AlN; intersubband; quantum well; photodetector; optical communication wavelength; nitride;

D O I：

10.1587/elex.2.566

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The room-temperature operation of a GaN/AlN quantum well infrared photodetector (QWIP) using the intersubband transition (ISBT) in a GaN/AlN multiple quantum well (MQW) was demonstrated for the first time. The GaN/AlN QWIP was operated under DC biasing with a vertically conductive geometry to the MQW layer. A clear photoinduced response was observed for P polarized 1.47 mu m light irradiation. Dependencies of the photoresponse on the applied DC bias voltage, and the polarization and wavelength of incident light were evaluated for the GaN/AlN QWIP. The maximum responsivity was estimated to be 0.11 mA/W for a DC bias of 15V at room temperature.

引用

页码：566 / 571

页数：6

共 26 条

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