Transmission electron microscopy of amorphization and phase transformation beneath indents in Si

被引：67

作者：

Saka, H ^{[1
]}

Shimatani, A

Suganuma, M

Suprijadi

机构：

[1] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan

[2] Aichi Ind Res Inst, Kariya, Aichi 4440003, Japan

[3] Inst Technol, Dept Phys, Bandung 40132, Indonesia

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 2002年 / 82卷 / 10期

关键词：

D O I：

10.1080/01418610210134404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microstructure beneath indents, with three different tip shapes (spherical. Vickers and Berkovich), in Si was examined using transmission electron microscopy. The focused-ion beam technique was applied to the preparation of specimens for cross-sectional observation. Activation of dislocations, cracking, phase transformation and amorphization were observed.

引用

页码：1971 / 1981

页数：11

共 21 条

[1] Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon [J].

Bradby, JE ;

Williams, JS ;

Wong-Leung, J ;

Swain, MV ;

Munroe, P .

APPLIED PHYSICS LETTERS, 2000, 77 (23) :3749-3751

[2] Mechanical deformation in silicon by micro-indentation [J].

Bradby, JE ;

Williams, JS ;

Wong-Leung, J ;

Swain, MV ;

Munroe, P .

JOURNAL OF MATERIALS RESEARCH, 2001, 16 (05) :1500-1507

[3] AMORPHIZATION AND CONDUCTIVITY OF SILICON AND GERMANIUM INDUCED BY INDENTATION [J].

CLARKE, DR ;

KROLL, MC ;

KIRCHNER, PD ;

COOK, RF ;

HOCKEY, BJ .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2156-2159

[4]

GALLAHAM DL, 1992, J MATER RES, V7, P1614

[5] DEFORMATION OF SILICON AT LOW-TEMPERATURES [J].

HILL, MJ ;

ROWCLIFFE, DJ .

JOURNAL OF MATERIALS SCIENCE, 1974, 9 (10) :1569-1576

[6] PHASES OF SILICON AT HIGH-PRESSURE [J].

HU, JZ ;

SPAIN, IL .

SOLID STATE COMMUNICATIONS, 1984, 51 (05) :263-266

[7] CRYSTAL DATA FOR HIGH-PRESSURE PHASES OF SILICON [J].

HU, JZ ;

MERKLE, LD ;

MENONI, CS ;

SPAIN, IL .

PHYSICAL REVIEW B, 1986, 34 (07) :4679-4684

[8] Phase transformations of silicon caused by contact loading [J].

Kailer, A ;

Gogotsi, YG ;

Nickel, KG .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) :3057-3063

[9] INDENTATION FRACTURE - PRINCIPLES AND APPLICATIONS [J].

LAWN, B ;

WILSHAW, R .

JOURNAL OF MATERIALS SCIENCE, 1975, 10 (06) :1049-1081

[10] Size-dependent phase transformations during point loading of silicon [J].

Mann, AB ;

van Heerden, D ;

Pethica, JB ;

Weihs, TP .

JOURNAL OF MATERIALS RESEARCH, 2000, 15 (08) :1754-1758

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