Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

被引：0

作者：

Sanchez-Martin, Hector ^{[1
]}

Garcia-Perez, Oscar ^{[1
]}

Iniguez-de-la-Torre, Ignacio ^{[1
]}

Perez, Susana ^{[1
]}

Gonzalez, Tomas ^{[1
]}

Mateos, Javier ^{[1
]}

Altuntas, Philippe ^{[2
]}

Defrance, Nicolas ^{[2
]}

Lesecq, Marie ^{[2
]}

Hoel, Virginie ^{[2
]}

Cordier, Yvon ^{[3
]}

Rennesson, Stephanie ^{[3
]}

机构：

[1] Univ Salamanca, Salamanca, Spain

[2] IEMN, Villeneuve Dascq, France

[3] CHREA, Valbonne, France

来源：

2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2016年

关键词：

Gallium nitride (GaN); high electron mobility transistor (HEMT); small signal equivalent circuit; traps; ALGAN/GAN HEMTS; GAN; TRANSISTORS; FETS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of traps in the GaN channel and the ohmic contacts. These effects have been modeled in the equivalent circuit of the transistors achieving a satisfactory agreement with the measured S-parameters.

引用

页码：157 / 160

页数：4

共 18 条

[1] Transistor Modeling [J].