Ohmic contact on single ZnO nanowires grown by MOCVD

被引：12

作者：

Geng, Wei ^{[1
]}

Kostcheev, Sergei ^{[1
]}

Sartel, Corinne ^{[3
]}

Sallet, Vincent ^{[3
]}

Molinari, Michael ^{[2
]}

Simonetti, Olivier

Lerondel, Gilles ^{[1
,2
]}

Giraudet, Louis ^{[2
]}

Couteau, Christophe ^{[1
]}

机构：

[1] Univ Technol Troyes, CNRS UMR 6279, Inst Charles Delaunay, Lab Nanotechnol & Instrumentat Opt, F-10000 Troyes, France

[2] Univ Reims, Lab Rec Nanosci, F-51685 Reims, France

[3] Univ Versailles, CNRS, GEMAC, F-78035 Versailles, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 10 | 2013年 / 10卷 / 10期

关键词：

ZnO; nanowires; ohmic contact; nanofabrication; FIELD-EFFECT TRANSISTOR; PHOTODETECTORS; DIODE;

D O I：

10.1002/pssc.201200984

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present work on the fabrication and the characterization of ohmic contacts on single zinc oxide nanowires grown by metalorganic chemical vapour deposition. We demonstrate pre-positionning of single nanowires before electronic-beam lithography for 2 point metallic contacts. We characterize single nanowires by microphotoluminescence and by current-voltage measurements. I-V results present a linear curve down to 1 mV with resistivities from 0.23 to 2.4 Omega center dot cm are measured, consistent with previous observation on ZnO nanowires. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1292 / 1296

页数：5

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