Characterization of Commercial P-MOSFETs for Using as a Gamma-Rays Dosimeter

Gamma-ray effect on commercial Metal- Oxide -Semiconductor -Field Effect Transistor (MOSFET) has been investigated at room temperature. This was accomplished by evaluation of the electrical characteristics I-V. The variation of the threshold voltage V-T, the drain current I-DS, and the transconductance g(m) have been also deduced as a function of the gamma-ray dose. Experimentally, testes were achieved on both linear and saturation regimes. The increase of V-T after irradiation was mainly invested to use MOSFET as gamma-ray dosimeter. This increase was almost linear for small doses up to 0.6 kGy with a constant sensitivity equals to 3 V/ kGy;while a nonlinearity behavior, at higher doses, was observed. The I-DS and g(m) were reduced after irradiation, but these can be compensated by increasing bias voltage.