Electrical properties of the n-ZnO/c-Si heterojunction prepared by chemical spray pyrolysis

被引：69
|
作者：
Romero, R
López, MC
Leinen, D
Martín, F
Ramos-Barrado, JR
机构：
[1] Univ Malaga, Fac Ciencias, Unidad Asociada CSIC, Lab Mat & Superficie,Dept Fis Aplicada, E-27071 Malaga, Spain
[2] Univ Malaga, Fac Ciencias, Unidad Asociada CSIC, Lab Mat & Superficie,Dept Ingn Quim, E-27071 Malaga, Spain
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 110卷 / 01期
关键词：
spray pyrolysis; n-ZnO/c-Si; heterojunction; electrical properties; admittance spectroscopy; C-V method;
D O I：
10.1016/j.mseb.2004.03.010
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical, structural and compositional properties of n-ZnO/c-Si heterciunctions prepared by chemical spray pyrolysis on single-crystal n-type and p-type monocrystalline silicon(1 0 0) substrates are examined with the C-V method and admittance spectroscopy at temperature ranges between 223 and 373 K. The n-ZnO/c-Si heterojunctions show a height barrier consistent with the difference in energy of the work functions of Si and ZnO; however, the n-ZnO:Al/c-Si heterojunctions present a more complex behavior due to the defects at or near the n-ZnO:Al/c-Si interface, causing a Fermi energy pinning. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：87 / 93
页数：7
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