Selective metallization of silicon micromechanical devices

被引：37
作者：
Carraro, C [1 ]
Magagnin, L [1 ]
Maboudian, R [1 ]
机构：
[1] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA 94720 USA
来源：
ELECTROCHIMICA ACTA | 2002年 / 47卷 / 16期
基金：
美国国家科学基金会;
关键词：
galvanic displacement; micro-electromechanical systems; adhesion; copper metallization;
D O I：
10.1016/S0013-4686(02)00118-4
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A new wet process for selective copper deposition on silicon surfaces is employed to achieve conformal metallization of silicon micromechanical devices. The method is based on galvanic displacement of the metal from a fluoride-containing bath. The plating bath also comprises a complexing agent. a surfactant and an anti-stress additive. Surface passivation of the displaced Cu film is effected by dodecanethiol self assembled monolayer coating. This surface passivation is found effective in reducing adhesion of micro-electromechanical systems. (C) 2002 Elsevier Science Ltd. All rights reserved.
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页码：2583 / 2588
页数：6
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