Axial InAs/GaAs heterostructures on silicon in a nanowire geometry

被引：1

作者：

Somaschini, C. ^{[1
]}

Biermanns, A. ^{[2
]}

Bietti, S. ^{[3
,4
]}

Bussone, G. ^{[2
,5
]}

Trampert, A. ^{[1
]}

Sanguinetti, S. ^{[3
,4
]}

Riechert, H. ^{[1
]}

Pietsch, U. ^{[2
]}

Geelhaar, L. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Univ Siegen, D-57068 Siegen, Germany

[3] Univ Milano Bicocca, LNESS, I-20125 Milan, Italy

[4] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[5] ESRF, F-38043 Grenoble, France

来源：

NANOTECHNOLOGY | 2014年 / 25卷 / 48期

关键词：

molecular beam epitaxy; nanowire; heterostructures; X-ray diffraction; droplet epitaxy; GAAS NANOWIRES; COMPOUND SEMICONDUCTORS; DROPLET EPITAXY; INAS; ELECTRONICS; GROWTH; PHOTOVOLTAICS; SI(111);

D O I：

10.1088/0957-4484/25/48/485602

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InAs segments were grown on top of GaAs islands, initially created by droplet epitaxy on silicon substrate. We systematically explored the growth-parameter space for the deposition of InAs, identifying the conditions for the selective growth on GaAs and for purely axial growth. The axial InAs segments were formed with their sidewalls rotated by 30 degrees compared to the GaAs base islands underneath. Synchrotron X-ray diffraction experiments revealed that the InAs segments are grown relaxed on top of GaAs, with a predominantly zincblende crystal structure and stacking faults.

引用

页数：6

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