A Compact Single Stage V-Band CMOS Injection-Locked Power Amplifier With 17.3% Efficiency

被引：12

作者：

Lin, Jiafu ^{[1
]}

Boon, Chirn Chye ^{[1
]}

Yi, Xiang ^{[1
]}

Lim, Wei Meng ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, VIRTUS, Singapore 639798, Singapore

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2014年 / 24卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

Injection-locked; power added efficiency (PAE); power amplifier (PA); 60; GHz;

D O I：

10.1109/LMWC.2013.2291858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a fully integrated CMOS V-band injection-locked power amplifier (ILPA) for phase and frequency modulated millimeter-Wave (mm-Wave) transmitter. At mm-Wave frequency, multi-stage PAs are usually employed to achieve enough power gain due to low power gain of CMOS transistor even though it has low power efficiency. This work investigates mm-Wave ILPA for constant envelope modulation transmitter with high gain and high efficiency. The proposed ILPA has been implemented in 65 nm CMOS technology, a 17.3% Power Added Efficiency (PAE) and 9.6 dBm peak output power have been achieved with a single stage design in a compact size at 1.2 V supply voltage.

引用

页码：182 / 184

页数：3

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