Effect of Post-Deposition Annealing on the Al2O3/Si(100) Interface Properties

被引：0
作者：
Prasanna, S. [1 ]
Kumar, A. K. Nanda [2 ]
Rao, G. Mohan [3 ]
Jayakumar, S. [1 ]
Balasundaraprabhu, R. [1 ]
机构：
[1] PSG Coll Technol, Dept Phys, Coimbatore 641004, Tamil Nadu, India
[2] Cent Electrochem Res Inst CSIR CECRI, Karaikkudi 560012, Tamil Nadu, India
[3] Indian Inst Sci IISc, Dept Instrumentat, Bangalore 560012, Karnataka, India
来源：
SCIENCE OF ADVANCED MATERIALS | 2014年 / 6卷 / 05期
关键词：
Al2O3 Thin Films; Reactive Magnetron Sputtering; Cross Sectional TEM; DC; DEPOSITION;
D O I：
10.1166/sam.2014.1863
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In the present investigation, Al2O3 thin films were deposited onto Si < 100 > substrates by DC reactive magnetron sputtering. The films were annealed in vacuum for one hour at 623, 823 and 1023 K. The composition of the films was quantitatively estimated using X-ray photoelectron spectroscopy (XPS) and the O/Al ratio was found be in the range 1.19 to 1.43. Grazing incidence X-ray diffraction (GIXRD) results revealed that the annealed films are amorphous in nature. Cross sectional transmission electron microscopy (X-TEM) analysis was carried out to study the microstructure and nature of the Al2O3-Si interface as a function of post-deposition annealing. TEM results revealed the presence of nanocrystalline gamma-Al2O3 in the annealed films and an amorphous interface layer was observed at the Al2O3 Si interface. The thickness of the amorphous interface layer was determined from the TEM analysis and the results are discussed.
引用
收藏
页码：1032 / 1036
页数：5
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