Reliable 1-W CW operation of high-brightness tapered diode lasers at 735 nm

被引：8
|
作者：
Sumpf, B [1 ]
Beister, G [1 ]
Erbert, G [1 ]
Fricke, J [1 ]
Knauer, A [1 ]
Ressel, P [1 ]
Tränkle, G [1 ]
机构：
[1] Ferdinand Braun Inst, D-12489 Berlin, Germany
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 04期
关键词：
high-brightness diode lasers; tapered lasers; tensile-strained GaAsP quantum wells;
D O I：
10.1109/LPT.2004.824949
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The long-term stability of high-brightness diode lasers at 735 nm was investigated. The diodes consist of an index-guided straight section and a gain-guided tapered section. A 1-W continuous-wave operation for 2-mm-long tapered lasers over 3200 h is reported. The experiments demonstrate high reliability with degradation rates below 3.2 x 10(-5) h(-1).
引用
收藏
页码：984 / 986
页数：3
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