Crystallinity and thickness control of well-ordered ultra-thin Al2O3 film on NiAl(110)

被引：27
作者：
Yoshitake, M [1 ]
Mebarki, B [1 ]
Lay, TT [1 ]
机构：
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050003, Japan
来源：
SURFACE SCIENCE | 2002年 / 511卷 / 1-3期
关键词：
aluminum oxide; insulating films; epitaxy; crystallization; low energy electron diffraction (LEED); auger electron spectroscopy;
D O I：
10.1016/S0039-6028(02)01567-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Epitaxial film of well-ordered ultra-thin (0.5 nm) Al2O3 is known to grow on NiAl(1 1 0) by 1200 L oxygen introduction. We found that the crystallinity of the epitaxial film was improved by introducing 1200 L oxygen at lower pressure. Control of the thickness of the epitaxial Al2O3 film was also achieved, by multiple-oxidation, for the first time. Successful thickness control of epitaxial Al2O3 film in the range of 0.5-1.4 nm is considered an important step toward a tunneling electron emitter device, as well as basic research for model catalysts. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L313 / L318
页数：6
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