Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM

被引：4

作者：

Lin, J. H. ^{[1
]}

Wu, Y. Q. ^{[1
]}

Tang, S. ^{[1
]}

Fan, Y. L. ^{[1
]}

Yang, X. J. ^{[1
]}

Jiang, Z. M. ^{[1
]}

Zou, J. ^{[2
,3
]}

机构：

[1] Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China

[2] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia

[3] Univ Queensland, Australia & Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2009年 / 9卷 / 04期

基金：

澳大利亚研究理事会; 中国国家自然科学基金;

关键词：

Molecular-Beam Epitaxy; Transmission Electron Microscopy; Ge(Si) Islands; Composition; Strain; GE QUANTUM DOTS; INFORMATION; TRANSITION; PYRAMIDS; SILICON; SURFACE;

D O I：

10.1166/jnn.2009.029

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The distributions of the composition and the strain in the Ge(Si)/Si(001) coherent islands grown by molecular-beam epitaxy are investigated by digital analysis of high resolution transmission electron microscopy (HRTEM) micrographs. Local composition and strain are obtained from the measurement of the lattice displacement based on the Poisson's formula and Vegard's law. The analysis suggests that the islands have high Ge content at the island's central region. The island is partially relaxed by the substrate deformation and strain concentrated around the edge of islands. The alloying of the islands was found due to the Si surface diffusion.

引用

页码：2753 / 2757

页数：5

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