Effect of Erbium Silicide Crystallinity for Low Barrier Contact between Erbium Silicide and n-type Silicon

被引：0

作者：

Tanaka, Hiroaki ^{[1
]}

Teramoto, Akinobu ^{[1
]}

Sugawa, Shigetoshi ^{[1
,2
]}

Ohmi, Tadahiro ^{[1
]}

机构：

[1] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan

[2] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

来源：

DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10 | 2012年 / 50卷 / 04期

关键词：

PERFORMANCE; CMOS; MICROSTRUCTURE; STRESS; SI;

D O I：

10.1149/05004.0343ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electrical and physical properties of ErSix on n-type Si(100) and Si(551) surfaces are reported. The Schottky barrier heights and the crystallinity of ErSix depend on the Si surface orientation. And the ErSix crystallinity affects the work function of ErSix. These silicidation reactions are very important to develop the high current drivability devices using any surface orientation.

引用

页码：343 / 348

页数：6

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