INDIVIDUAL PHONON BRANCH CONTRIBUTION TO THERMAL CONDUCTIVITY OF 3C-SIC USING THE MONTE CARLO METHOD

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作者：

Barnes, Arden N. ^{[1
]}

Roberts, Nick ^{[1
]}

机构：

[1] Utah State Univ, Dept Mech & Aerosp Engn, Logan, UT 84322 USA

来源：

PROCEEDINGS OF THE ASME INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION, 2018, VOL 8B | 2019年

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摘要：

Silicon carbide (SiC) is a useful semiconductor material due to its high thermal conductivity (A), low reactivity, and high strength. These properties also make it an ideal nuclear fuel cladding material. Because heat transfer in SiC is dominated by phonons, there is value in understanding how different phonon branches contribute to A. To accomplish this, it is useful to run simulations which employ fewer phonon branches than normally exist. In materials where phonons dominate heat transport, such as SiC, the Monte Carlo method as applied to phonon transport is suitable for estimating This work uses the Monte Carlo method to estimate A of 3C-SiC using four phonon branches, namely, transverse acoustic (TA), longitudinal acoustic (LA), transverse optical (TO), and longitudinal optical (LO). By adding branches into the simulation and measuring A, the individual contributions to A from each branch can be determined.

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页数：6