Schottky contacts on single-crystal CVD diamond

被引:0
作者
Doneddu, D. [1 ]
Guy, O. J. [1 ]
Twitchen, D. [2 ]
Tajani, A. [2 ]
Schwitters, M. [2 ]
Igic, P. [1 ]
机构
[1] Univ Coll Swansea, Sch Engn, Singleton Pk, Swansea SA2 8PP, W Glam, Wales
[2] Element Six Ltd, Ascot SL5 8BP, Berkshire, England
来源
2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2006年
关键词
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a comparison of Gold, Nickel and Aluminium Schottky diodes fabricated on high-quality, Single-Crystal CVD Diamond is presented. Different metals. such as Gold, Nickel and Aluminium, have been deposited on the oxidised surface of an intrinsic diamond layer to serve as Schottky contacts, in order to investigate the physical properties of the different metal-semiconductor interfaces. A Cr-layer, followed by a subsequent Au deposition was used to form the Ohmic back contact for the Au-Schottky diodes, whereas a Cr-layer followed by a Ni deposition formed the Ohmic contact for the Ni and Al-Schottky contacts. Contacts have been characterized using I-V measurements. The gold Schottky contacts exhibited reverse leakage currents as low as 0.01 mu A at a reverse voltage of -600V, rising to 10 mu A at 1 kV (without any periphery protection). Nickel and Aluminium contacts exhibited lower reverse leakage currents and higher average breakdown voltages, whilst giving poorer forward conduction.
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页码:189 / +
页数:2
相关论文
共 13 条
[1]   The development of diamond tracking detectors for the LHC [J].
Adam, W ;
Berdermann, E ;
Bergonzo, P ;
de Boer, W ;
Bogani, F ;
Borchi, E ;
Brambilla, A ;
Bruzzi, M ;
Colledani, C ;
Conway, J ;
D'Angelo, P ;
Dabrowski, W ;
Delpierre, P ;
Doroshenko, J ;
Dulinski, W ;
van Eijk, B ;
Fallou, A ;
Fischer, P ;
Fizzotti, F ;
Furetta, C ;
Gan, KK ;
Ghodbane, N ;
Grigoriev, E ;
Hallewell, G ;
Han, S ;
Hartjes, F ;
Hrubec, J ;
Husson, D ;
Kagan, H ;
Kaplon, J ;
Karl, C ;
Kass, R ;
Keil, M ;
Knöpfle, KT ;
Koeth, T ;
Krammer, M ;
Logiudice, A ;
Lu, R ;
mac Lynne, L ;
Manfredotti, C ;
Marshall, RD ;
Meier, D ;
Menichelli, D ;
Meuser, S ;
Mishina, M ;
Moroni, L ;
Noomen, J ;
Oh, A ;
Perera, L ;
Pernegger, H .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 514 (1-3) :79-86
[2]   CVD diamond for nuclear detection applications [J].
Bergonzo, P ;
Brambilla, A ;
Tromson, D ;
Mer, C ;
Guizard, B ;
Marshall, RD ;
Foulon, F .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 476 (03) :694-700
[3]  
DONEDDU D, IN PRESS MAT SCI FOR
[4]   Diamond semiconductor technology for RF device applications [J].
Gurbuz, Y ;
Esame, O ;
Tekin, I ;
Kang, WP ;
Davidson, JL .
SOLID-STATE ELECTRONICS, 2005, 49 (07) :1055-1070
[5]   High carrier mobility in single-crystal plasma-deposited diamond [J].
Isberg, J ;
Hammersberg, J ;
Johansson, E ;
Wikström, T ;
Twitchen, DJ ;
Whitehead, AJ ;
Coe, SE ;
Scarsbrook, GA .
SCIENCE, 2002, 297 (5587) :1670-1672
[6]   Single crystal diamond for electronic applications [J].
Isberg, J ;
Hammersberg, J ;
Twitchen, DJ ;
Whitehead, A .
DIAMOND AND RELATED MATERIALS, 2004, 13 (02) :320-324
[7]   Formation of diamond p-n junction and its optical emission characteristics [J].
Koizumi, S ;
Watanabe, K ;
Hasegawa, M ;
Kanda, H .
DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) :307-311
[8]   Ultraviolet emission from a diamond pn junction [J].
Koizumi, S ;
Watanabe, K ;
Hasegawa, M ;
Kanda, H .
SCIENCE, 2001, 292 (5523) :1899-1901
[9]   Electrical characterization of homoepitaxial diamond p-n+ junction [J].
Makino, T ;
Kato, H ;
Ri, SG ;
Chen, YG ;
Okushi, H .
DIAMOND AND RELATED MATERIALS, 2005, 14 (11-12) :1995-1998
[10]  
SCHWITTERS M, 2005, 1 INT IND DIAM C BAR