Optimization of alloy composition for high-performance strained-Si-SiGe n-channel MOSFETs

被引：16

作者：

Olsen, SH ^{[1
]}

O'Neill, AG

Driscoll, LS

Chattopadhyay, S

Kwa, KSK

Waite, AM

Tang, YT

Evans, AGR

Zhang, J

机构：

[1] Univ Newcastle, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[2] Univ Southampton, Dept Elect & Comp Sci, Southampton S017 1BJ, Hants, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Ctr Elect Mat & Devices, London SW7 2BW, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

drain current enhancement; mobility enhancement; n-MOSFETs; silicon-germanium (SiGe); strained-Silicon; thermal budget; transconductance enhancement; virtual substrate;

D O I：

10.1109/TED.2004.830656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On-state and off-state performance of strained-Si-SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si-SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si0.75Ge0.25. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics.

引用

页码：1156 / 1163

页数：8

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