Amplitude and spatial frequency characterization of line edge roughness using CD-SEM

被引:19
作者
Eytan, G [1 ]
Dror, O [1 ]
Ithier, L [1 ]
Florin, B [1 ]
Lamouchi, Z [1 ]
Martin, N [1 ]
机构
[1] Appl Mat Inc, Rehovot, Israel
来源
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVI, PTS 1 & 2 | 2002年 / 4689卷
关键词
line edge roughness; CD-SEM; FEM wafer;
D O I
10.1117/12.473473
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
dIn this work we describe a simple and easy way to implement line edge roughness measurement using the Applied Materials VeraSEM_3D CD SEM. The outcomes of the measurement are the roughness amplitude and its main spatial wavelength components. In the first step we test this method on an e-beam resist wafer with known roughness and correlate the results with AFM measurements. In the second step, we measured the line roughness of a 193 nm resist FEM wafer. It was found that negative defocus is characterized by long wavelength components while positive defocus shows line roughness at all wavelengths.
引用
收藏
页码:347 / 355
页数:9
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