Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

被引：35
作者：
Correa, S. A. [1 ]
Radtke, C. [1 ]
Soares, G. V. [5 ]
Miotti, L. [4 ,5 ]
Baumvol, I. J. R. [4 ,5 ]
Dimitrijev, S. [2 ,3 ]
Han, J. [2 ,3 ]
Hold, L. [2 ,3 ]
Kong, F. [2 ,3 ]
Stedile, F. C. [1 ]
机构：
[1] Univ Fed Rio Grande do Sul, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil
[2] Griffith Univ, Queensland Microtechnol Facil, Nathan, Qld 4111, Australia
[3] Griffith Univ, Griffith Sch Engn, Nathan, Qld 4111, Australia
[4] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509900 Porto Alegre, RS, Brazil
[5] Univ Caxias Sul, Ctr Ciencias Exatas & Tecnol, BR-95070560 Caxias Do Sul, Brazil
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 25期
基金：
澳大利亚研究理事会;
关键词：
annealing; carbon; dielectric thin films; impurities; nitrogen; nitrogen compounds; oxygen; silicon compounds; wide band gap semiconductors; X-ray photoelectron spectra; X-ray reflection; SILICON-CARBIDE; PHOTOELECTRON-SPECTROSCOPY; NITRIDATION; OXIDATION; OXIDE;
D O I：
10.1063/1.3159812
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O-2, NO, and in O-2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy were used to determine N and C incorporation in dielectric films and interlayers, as well to determine their mass densities and thicknesses. The thickest C-containing interlayer was observed for films thermally grown in O-2, whereas the thinnest one was observed for films directly grown in NO, evidencing that the presence of N decreases the amount of carbonaceous compounds in the dielectric/SiC interface region.
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页数：3
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