Time-dependent snapback in thin-film SOI MOSFET's

被引：6

作者：

Raha, P

Miller, JW

Rosenbaum, E

机构：

[1] Coordinated Science Laboratory, University of Illinois, Urbana

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.641428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

During pulsed stressing of SOI MOSFET's for ESD characterization, the turn-on voltage of the parasitic bipolar transistor was observed to be a function of the stress pulse-width. This observation can be understood in terms of a capacitive charging model, The theory behind this time-dependent snapback is presented in this letter along with the experimental results, Comparisons with bulk-Si devices indicate that this phenomenon is specific to SOI and is a manifestation of the floating body effect.

引用

页码：509 / 511

页数：3

共 8 条

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