Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

被引：62

作者：

Fang, Runchen ^{[1
,2
]}

Velo, Yago Gonzalez ^{[2
]}

Chen, Wenhao ^{[2
]}

Holbert, Keith E. ^{[2
]}

Kozicki, Michael N. ^{[2
]}

Barnaby, Hugh ^{[2
]}

Yu, Shimeng ^{[1
,2
]}

机构：

[1] Arizona State Univ, Sch Comp Informat & Decis Syst Engn, Tempe, AZ 85281 USA

[2] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 18期

关键词：

ELECTRICAL CHARACTERISTICS; IMPACT;

D O I：

10.1063/1.4875748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The total ionizing dose (TID) effect of gamma-ray (gamma-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level similar to 5.2 Mrad (HfO2) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy gamma-ray exposure. (C) 2014 AIP Publishing LLC.

引用

页数：5

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