Effects of amorphizing species' ion mass on the end-of-range damage formation in silicon

被引：14
|
作者：
Clark, MH [1 ]
Jones, KS
Haynes, TE
Barbour, CJ
Minor, KG
Andideh, E
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] Intel Corp, Hillsboro, OR 97124 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 22期
关键词：
D O I：
10.1063/1.1483383
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of preamorphizing ion mass on the end-of-range (EOR) damage and subsequent enhanced diffusivity have been investigated. Amorphizing silicon with implants of 22 keV Si-28(+), 32 keV Ge-73(+), 40 keV Sn-119(+), and 45 keV Pb-207(+) provided the mass comparisons. Cross-sectional transmission electron microscopy analysis showed that the amorphous layer depths were approximately 400 A. After postimplantation annealing at 750 degreesC for 30 min, plan-view transmission electron microscopy (PTEM) revealed that increasing the ion mass decreased the defect size and density. Quantitative analysis of PTEM results also showed that increasing ion mass decreased the population of interstitials trapped in the EOR. Secondary ion mass spectrometry depth profiles of grown-in boron marker layers showed that increasing the ion mass decreased the time average diffusivity enhancements of boron (<D-B>/D-B(*)). (C) 2002 American Institute of Physics.
引用
收藏
页码：4163 / 4165
页数：3
相关论文
共 50 条
  • [21] Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients
    Giles, L.F.
    Omri, M.
    de Mauduit, B.
    Claverie, A.
    Skarlatos, D.
    Tsoukalas, D.
    Nejim, A.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1999, 148 (1-4): : 273 - 278
  • [22] Size distribution of end-of-range dislocation loops in silicon-implanted silicon
    Pan, GZ
    Tu, KN
    Prussin, S
    APPLIED PHYSICS LETTERS, 1996, 68 (12) : 1654 - 1656
  • [23] THE EFFECT OF IMPLANT ENERGY, DOSE, AND DYNAMIC ANNEALING ON END-OF-RANGE DAMAGE IN GE+-IMPLANTED SILICON
    JONES, KS
    VENABLES, D
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 2931 - 2937
  • [24] Evolution of end-of-range defects in silicon-on-insulator substrates
    Fazzini, P. F.
    Cristiano, F.
    Dupre, C.
    Paul, S.
    Ernst, T.
    Kheyrandish, H.
    Bourdelle, K. K.
    Lerch, W.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 154 (256-259): : 256 - 259
  • [25] ELIMINATION OF END-OF-RANGE IMPLANTATION DAMAGE DURING CMOS TI SILICIDATION
    WEN, DS
    SMITH, P
    OSBURN, CM
    ROZGONYI, GA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) : C265 - C265
  • [26] THE CRYSTALLINE-TO-AMORPHOUS TRANSITION IN GE-IMPLANTED SILICON AND ITS ROLE IN THE FORMATION OF END-OF-RANGE DEFECTS
    SEIBT, M
    IMSCHWEILER, J
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, (134): : 137 - 140
  • [27] Residual end-of-range damage reduction in low-temperature-annealed ion-implanted junctions by using low-doped silicon substrate
    Tamai, Y
    Oka, MM
    Nakada, A
    Shibata, T
    Ohmi, T
    ULSI SCIENCE AND TECHNOLOGY / 1997: PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ULTRALARGE SCALE INTEGRATION SCIENCE AND TECHNOLOGY, 1997, 1997 (03): : 643 - 654
  • [28] Self-interstitial supersaturation during Ostwald ripening of end-of-range defects in ion-implanted silicon
    Seibt, M
    RAPID THERMAL AND INTEGRATED PROCESSING V, 1996, 429 : 109 - 114
  • [29] Influence of Ostwald ripening of end-of-range defects on transient enhanced diffusion in silicon
    Uematsu, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (11A): : L1213 - L1215
  • [30] The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
    Bonafos, C
    Claverie, A
    Alquier, D
    Bergaud, C
    Martinez, A
    Laanab, L
    Mathiot, D
    APPLIED PHYSICS LETTERS, 1997, 71 (03) : 365 - 367
12345