Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum

被引:24
作者
Svrcek, Vladimir [1 ]
Dohnalova, Katerina [2 ]
Mariotti, Davide [3 ]
Minh Tuan Trinh [2 ]
Limpens, Rens [2 ]
Mitra, Somak [3 ]
Gregorkiewicz, Tom [2 ]
Matsubara, Koiji [1 ]
Kondo, Michio [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan
[2] Van der Waals Zeeman Inst, NL-1098 XH Amsterdam, Netherlands
[3] Univ Ulster, Nanotechnol & Integrated Bioengn Ctr NIBEC, Coleraine BT52 1SA, Londonderry, North Ireland
基金
爱尔兰科学基金会; 英国工程与自然科学研究理事会;
关键词
solar cells; nanocrystals; carrier multiplication; semiconductors; MULTIPLE EXCITON GENERATION; SILICON NANOCRYSTALS; CARRIER MULTIPLICATION; PHOTOVOLTAIC APPLICATIONS; LIQUID-MEDIA; DOTS; RECOMBINATION; ABSORPTION; CHEMISTRY; CELLS;
D O I
10.1002/adfm.201301468
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Substantial improvements of the absolute photoluminescence quantum yield (QY) for surfactant-free silicon nanocrystals (Si-ncs) by atmospheric pressure microplasma 3-dimensional surface engineering are reported. The effect of surface characteristics on carrier multiplication mechanisms is explored using transient induced absorption and photoluminescence QY. Surface engineering of Si-ncs is demonstrated to lead to more than 120 times increase in the absolute QY (from 0.1% up to 12%) within an important spectral range of the solar emission (2.3-3 eV). The Si-ncs QY is shown to be stable when Si-ncs are stored in ethanol at ambient conditions for three months.
引用
收藏
页码:6051 / 6058
页数:8
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